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NPD0x0N120A is a 1200V series SiC Schottky diode product, with four current specifications, namely, 10A, 20A, 30A and 40A, which is designed for PV, energy storage, charging and other industrial applications. It offers excellent efficiency characteristics in single- or three-phase PFC, and isolation or non-isolation DC-DC circuits to meet the needs of medium- and high-voltage systems. Compared with traditional silicon-based diodes, the forward conduction voltage of high-voltage SiC diodes is lower, and the reverse recovery current is almost zero, which is not affected by the forward conduction current, turn-off speed (di/dt) and junction temperature. It has excellent reverse recovery characteristics, and can be used with high-frequency switching devices to improve switching frequency, thus reducing the overall volume and cost of the system. Its excellent reverse recovery features also lead to better EMI performance. In addition, the thermal conductivity of SiC material is stronger, so its heat dissipation performance under the same package is better.
- Operating voltage range of up to 1200V
- Current specifications: 10A, 20A, 30A and 40A
- Operating temperature: -55°C~175°C
- Zero reverse recovery current
- Excellent inrush current capability
- Positive temperature coefficient of on-state voltage for easy parallel connection
- Suitable for applications with high switching frequency
- PV storage
- Charging piles
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