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GaN Integrated Power Stage
NOVOSENSE's GaN Integrated Power Stage combine GaN HEMTs and dedicated drivers internally, which reduces the impact of stray inductance in the driver and power loop, facilitates the safe and reliable operation of GaN HEMTs, and simplifies the peripheral circuit design and layout area, thereby maximizing the efficiency and power density.
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| Part Number | ECAD Model | Produtc Type | Bus Voltage (v) | Rds(on)(mΩ) | Ids(A) | Features | Operating Temperature (°C) | Qualification | Package |
|---|---|---|---|---|---|---|---|---|---|
| NSG65N15K-DQAFR |
|
Half bridge | 700 | 150 | 20 | UVLO, Dead-time
programmable, Integrated
bootstrap diode | -40~125 | Industrial | QFN32 |
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