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NSI6601M is a single-channel isolation gate driver suitable for driving IGBT, power MOSFET and SiC MOSFET in many applications. Separate outputs are provided to control the rising and falling duration respectively. It can provide peak source/sink current of 5A/5A, and Miller clamp to prevent mis-conduction at high di/dt. The minimum 150kV/μs common mode transient immunity (CMTI) ensures the robustness of the system. The maximum power supply voltage of the driver is 32V, and the input side is supplied with a power supply voltage of 3.1V to 17V. All power pins support undervoltage lockout (UVLO) protection. NSI6601M is designed with high drive current, excellent durability, wide power supply voltage range and fast signal propagation, and is suitable for switching power supply systems which require high reliability, high power density and high efficiency.
• Single-channel isolated driver
• Input side supply voltage: 3.1V to 17V
• Driver side power supply voltage: up to 32V, with both 9V and 13V UVLO options
• Version M supports Miller Clamp function (NSi6601M) with current up to 5A
• Peak source/sink current of 5A/5A
• High CMTI: 150kV / μs
• Typical propagation delay: 78ns
• Operation ambient temperature: -40℃~125℃
• AEC-Q100
• RoHS compliant packaging:
• SOP8(150 mil)
• SOP8(300 mil)
• UL1577 certification:
• SOP8(150 mil): 3kVRMS for 1 min.
• SOP8(300 mil): 5.7kVRMS for 1 min.
• CQC certification: Comply with GB4943.1-2011
• CSA certification: Components comply with 5A
• VDE certification: DIN V VDE V 0884-11:2017-1
• Isolated DC/DC and AC/DC power supplies
• High-voltage PFC
• PV inverter
• Motor driver and electric vehicle charging
• UPS and battery charger
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